Metal induced gap states and Schottky barrier heights at non–reactive GaN/noble metal interfaces

We present ab-initio local density FLAPW calculations on non–reactive N– terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is appreciable only in the first semiconductor layer close to the interface. The decay length of the gap states in the semiconductor side is about 2.0 ± 0.1 Å and is independent of the deposited metal, therefore being to a good extent a bulk property of GaN. Our calculated values of the